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STB18NM80 数据表(PDF) 1 Page - STMicroelectronics |
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STB18NM80 数据表(HTML) 1 Page - STMicroelectronics |
1 / 21 page This is information on a product in full production. May 2012 Doc ID 15421 Rev 5 1/21 21 STB18NM80, STF18NM80, STP18NM80, STW18NM80 N-channel 800 V, 0.25 Ω, 17 A, MDmesh™ Power MOSFET in D²PAK, TO-220FP, TO-220 and TO-247 packages Datasheet — production data Features ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Application ■ Switching applications Description These N-channel Power MOSFETs are developed using STMicroelectronics’ revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST’s proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market. Figure 1. Internal schematic diagram Order codes VDSS RDS(on) max ID STB18NM80 800 V < 0.295 Ω 17 A STF18NM80 800 V < 0.295 Ω 17 A (1) 1. Limited only by maximum temperature allowed STP18NM80 800 V < 0.295 Ω 17 A STW18NM80 800 V < 0.295 Ω 17 A TO-220 D²PAK TO-247 1 2 3 1 2 3 TO-220FP 1 3 1 2 3 Table 1. Device summary Order codes Marking Package Packaging STB18NM80 18NM80 D²PAK Tape and reel STF18NM80 TO-220FP Tube STP18NM80 TO-220 STW18NM80 TO-247 www.st.com |
类似零件编号 - STB18NM80 |
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类似说明 - STB18NM80 |
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