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FDD86326 数据表(PDF) 2 Page - Fairchild Semiconductor

部件名 FDD86326
功能描述  N-Channel Shielded Gate PowerTrench MOSFET 80 V, 37 A, 23 m Ohm
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制造商  FAIRCHILD [Fairchild Semiconductor]
网页  http://www.fairchildsemi.com
标志 FAIRCHILD - Fairchild Semiconductor

FDD86326 数据表(HTML) 2 Page - Fairchild Semiconductor

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©2010 Fairchild Semiconductor Corporation
FDD86326 Rev.C2
www.fairchildsemi.com
2
Electrical Characteristics T
J = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 PA, VGS = 0 V
80
V
'BVDSS
'TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 PA, referenced to 25 °C
67
mV/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 64 V, VGS = 0 V
1
PA
IGSS
Gate to Source Leakage Current
VGS = ±20 V, VDS = 0 V
±100
nA
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 PA
2
3.1
4
V
'VGS(th)
'TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250 PA, referenced to 25 °C
-8.5
mV/°C
rDS(on)
Static Drain to Source On Resistance
VGS = 10 V, ID = 8 A
19
23
m
:
VGS = 6 V, ID = 4.6 A
26
37
VGS = 10 V, ID = 8 A, TJ = 125 °C
33
44
gFS
Forward Transconductance
VDS = 10 V, ID = 8 A
21
S
(Note 2)
Dynamic Characteristics
Ciss
Input Capacitance
VDS = 50 V, VGS = 0 V,
f = 1 MHz
780
1035
pF
Coss
Output Capacitance
180
240
pF
Crss
Reverse Transfer Capacitance
15
25
pF
Rg
Gate Resistance
0.4
:
Switching Characteristics
td(on)
Turn-On Delay Time
VDD = 50 V, ID = 8 A,
VGS = 10 V, RGEN = 6 :
7.6
15
ns
tr
Rise Time
3.0
10
ns
td(off)
Turn-Off Delay Time
13.4
24
ns
tf
Fall Time
2.9
10
ns
Qg
Total Gate Charge
VGS = 0 V to 10 V
VDD = 50 V,
ID = 8 A
13.4
19
nC
Qg
Total Gate Charge
VGS = 0 V to 5 V
7.6
11
nC
Qgs
Gate to Source Gate Charge
4.0
nC
Qgd
Gate to Drain “Miller” Charge
3.7
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
VGS = 0 V, IS = 8 A
(Note 2)
0.8
1.3
V
VGS = 0 V, IS = 2.6 A
(Note 2)
0.7
1.2
trr
Reverse Recovery Time
IF = 8 A, di/dt = 100 A/Ps
43
68
ns
Qrr
Reverse Recovery Charge
43
68
nC
Notes:
1. RTJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RTJC is guaranteed by design while RTJA is determined by the user’s board design.
2. Pulse Test: Pulse Width < 300
Ps, Duty cycle < 2.0%.
3. Starting TJ = 25°C, L = 3 mH, IAS = 9 A, VDD = 80 V, VGS = 10 V.
a. 40 °C/W when mounted on a
1 in2 pad of 2 oz copper.
b. 96 °C/W when mounted on a
minimum pad of 2 oz copper.


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