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FDD86326 数据表(PDF) 2 Page - Fairchild Semiconductor |
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FDD86326 数据表(HTML) 2 Page - Fairchild Semiconductor |
2 / 6 page ©2010 Fairchild Semiconductor Corporation FDD86326 Rev.C2 www.fairchildsemi.com 2 Electrical Characteristics T J = 25 °C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 PA, VGS = 0 V 80 V 'BVDSS 'TJ Breakdown Voltage Temperature Coefficient ID = 250 PA, referenced to 25 °C 67 mV/°C IDSS Zero Gate Voltage Drain Current VDS = 64 V, VGS = 0 V 1 PA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 PA 2 3.1 4 V 'VGS(th) 'TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 PA, referenced to 25 °C -8.5 mV/°C rDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 8 A 19 23 m : VGS = 6 V, ID = 4.6 A 26 37 VGS = 10 V, ID = 8 A, TJ = 125 °C 33 44 gFS Forward Transconductance VDS = 10 V, ID = 8 A 21 S (Note 2) Dynamic Characteristics Ciss Input Capacitance VDS = 50 V, VGS = 0 V, f = 1 MHz 780 1035 pF Coss Output Capacitance 180 240 pF Crss Reverse Transfer Capacitance 15 25 pF Rg Gate Resistance 0.4 : Switching Characteristics td(on) Turn-On Delay Time VDD = 50 V, ID = 8 A, VGS = 10 V, RGEN = 6 : 7.6 15 ns tr Rise Time 3.0 10 ns td(off) Turn-Off Delay Time 13.4 24 ns tf Fall Time 2.9 10 ns Qg Total Gate Charge VGS = 0 V to 10 V VDD = 50 V, ID = 8 A 13.4 19 nC Qg Total Gate Charge VGS = 0 V to 5 V 7.6 11 nC Qgs Gate to Source Gate Charge 4.0 nC Qgd Gate to Drain “Miller” Charge 3.7 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage VGS = 0 V, IS = 8 A (Note 2) 0.8 1.3 V VGS = 0 V, IS = 2.6 A (Note 2) 0.7 1.2 trr Reverse Recovery Time IF = 8 A, di/dt = 100 A/Ps 43 68 ns Qrr Reverse Recovery Charge 43 68 nC Notes: 1. RTJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RTJC is guaranteed by design while RTJA is determined by the user’s board design. 2. Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0%. 3. Starting TJ = 25°C, L = 3 mH, IAS = 9 A, VDD = 80 V, VGS = 10 V. a. 40 °C/W when mounted on a 1 in2 pad of 2 oz copper. b. 96 °C/W when mounted on a minimum pad of 2 oz copper. |
类似零件编号 - FDD86326 |
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