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Si5326B-C-GM 数据表(PDF) 6 Page - Silicon Laboratories |
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Si5326B-C-GM 数据表(HTML) 6 Page - Silicon Laboratories |
6 / 72 page Si5326 6 Rev. 1.0 Differential Output Swing CKOVD LVPECL 100 load line- to-line 1.1 — 1.9 VPP Single Ended Output Swing CKOVSE LVPECL 100 load line- to-line 0.5 — 0.93 VPP Differential Output Voltage CKOVD CML 100 load line-to- line 350 425 500 mVPP Common Mode Output Voltage CKOVCM CML 100 load line-to- line —VDD-0.36 — V Differential Output Voltage CKOVD LVDS 100 load line-to-line 500 700 900 mVPP Low Swing LVDS 100 load line-to-line 350 425 500 mVPP Common Mode Output Voltage CKOVCM LVDS 100 load line-to- line 1.125 1.2 1.275 V Differential Output Resistance CKORD CML, LVPECL, LVDS — 200 — Output Voltage Low CKOVOLLH CMOS — — 0.4 V Output Voltage High CKOVOHLH VDD = 1.71 V CMOS 0.8 x VDD —— V Table 2. DC Characteristics (Continued) (VDD = 1.8 ± 5%, 2.5 ±10%, or 3.3 V ±10%, TA = –40 to 85 °C) Parameter Symbol Test Condition Min Typ Max Unit Notes: 1. Current draw is independent of supply voltage 2. No under- or overshoot is allowed. 3. LVPECL outputs require nominal VDD ≥ 2.5 V. 4. This is the amount of leakage that the 3-Level inputs can tolerate from an external driver. See Si53xx Family Reference Manual for more details. 5. LVPECL, CML, LVDS and low-swing LVDS measured with Fo = 622.08 MHz. |
类似零件编号 - Si5326B-C-GM |
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类似说明 - Si5326B-C-GM |
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