FQPF5N50CFTU datasheet(1/8 Pages) FAIRCHILD

部件名	FQPF5N50CFTU

功能描述	Low gate charge ( typical 18nC)

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制造商	FAIRCHILD [Fairchild Semiconductor]

网页	http://www.fairchildsemi.com

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FQPF5N50CF Rev. B

FRFET

TM

FQPF5N50CF

500V N-Channel MOSFET

Features

•

5A, 500V, RDS(on) = 1.55 Ω @VGS = 10 V

• Low gate charge ( typical 18nC)

• Low Crss ( typical 15pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

Description

These N-Channel enhancement mode power field effect transis-

tors are produced using Fairchild’s proprietary, planar stripe,

DMOS technology.

This advanced technology has been especially tailored to mini-

mize on-state resistance, provide superior switching perfor-

mance, and withstand high energy pulse in the avalanche and

commutation mode. These devices are well suited for high effi-

ciency switched mode power supplies, active power factor cor-

rection, electronic lamp ballasts based on half bridge topology.

Absolute Maximum Ratings

Thermal Characteristics

●

▲

!

◀

●

▲

!

◀

S

D

G

TO-220F

FQPF Series

G

S

D

Symbol

Parameter

FQPF5N50CF

Units

VDSS

Drain-Source Voltage

500

V

ID

Drain Current

- Continuous (TC = 25°C)

5

A

- Continuous (TC = 100°C)

2.9

A

IDM

Drain Current

- Pulsed

(Note 1)

20

A

VGSS

Gate-Source Voltage

± 30

V

EAS

Single Pulsed Avalanche Energy

(Note 2)

300

mJ

IAR

Avalanche Current

(Note 1)

5A

EAR

Repetitive Avalanche Energy

(Note 1)

7.3

mJ

dv/dt

Peak Diode Recovery dv/dt

(Note 3)

4.5

V/ns

PD

Power Dissipation (TC = 25°C)

38

W

- Derate above 25°C

0.3

W/°C

TJ, TSTG

Operating and Storage Temperature Range

-55 to +150

°C

TL

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

300

°C

Symbol

Parameter

FQPF5N50CF

Units

RθJC

Thermal Resistance, Junction-to-Case

3.31

°C/W

RθJS

Thermal Resistance, Case-to-Sink Typ.

--

°C/W

RθJA

Thermal Resistance, Junction-to-Ambient

62.5

°C/W

类似零件编号 - FQPF5N50CFTU

制造商	部件名	数据表	功能描述
Fairchild Semiconductor	FQPF5N50CF	657Kb / 8P	500V N-Channel MOSFET

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