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STB30N65M5 数据表(PDF) 9 Page - STMicroelectronics |
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STB30N65M5 数据表(HTML) 9 Page - STMicroelectronics |
9 / 22 page STB/F/I/P/W30N65M5 Test circuits Doc ID 15331 Rev 3 9/22 3 Test circuits Figure 19. Switching times test circuit for resistive load Figure 20. Gate charge test circuit Figure 21. Test circuit for inductive load switching and diode recovery times Figure 22. Unclamped inductive load test circuit Figure 23. Unclamped inductive waveform Figure 24. Switching time waveform AM01468v1 VGS PW VD RG RL D.U.T. 2200 μF 3.3 μF VDD AM01469v1 VDD 47k Ω 1k Ω 47k Ω 2.7k Ω 1k Ω 12V Vi=20V=VGMAX 2200 μF PW IG=CONST 100 Ω 100nF D.U.T. VG AM01470v1 A D D.U.T. S B G 25 Ω A A B B RG G FAST DIODE D S L=100 μH μF 3.3 1000 μF VDD AM01471v1 Vi Pw VD ID D.U.T. L 2200 μF 3.3 μF VDD AM01472v1 V(BR)DSS VDD VDD VD IDM ID AM05540v2 Id Vgs Vds 90%Vds 10%Id 90%Vgs on Tdelay-off Tfall Trise Tcross -over 10%Vds 90%Id Vgs(I(t)) on -off Tfall Trise - )) Concept waveform for Inductive Load Turn-off |
类似零件编号 - STB30N65M5 |
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类似说明 - STB30N65M5 |
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