FQP85N06 datasheet(3/8 Pages) FAIRCHILD

部件名	FQP85N06

功能描述	60V N-Channel MOSFET

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制造商	FAIRCHILD [Fairchild Semiconductor]

网页	http://www.fairchildsemi.com

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3 / 8 page

Rev. A1. May 2001

020

40

60

80

100

0

2

4

6

8

10

12

V

DS = 30V

V

DS = 48V

※ Note : I

D

= 85A

Q

G, Total Gate Charge [nC]

10

-1

10

0

10

1

0

2000

4000

6000

8000

C

iss = Cgs + Cgd (Cds = shorted)

C

oss = Cds + Cgd

C

rss = Cgd

※ Notes :

1. V

GS = 0 V

2. f =1 MHz

C

rss

C

oss

C

iss

V

DS, Drain-Source Voltage [V]

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

10

0

10

1

10

2

175℃

※ Notes :

1. V

GS = 0V

2. 250μ s Pulse Test

25℃

V

SD, Source-Drain voltage [V]

0

50

100

150

200

250

300

350

0.000

0.003

0.006

0.009

0.012

0.015

V

GS = 20V

V

GS = 10V

※ Note : T

J = 25

℃

I

D, Drain Current [A]

2468

10

0

10

1

10

2

175℃

25℃

-55℃

※ Notes :

1. V

DS = 30V

2. 250μ s Pulse Test

V

GS, Gate-Source Voltage [V]

10

-1

10

0

10

1

10

0

10

1

10

2

V

GS

Top :

15.0 V

10.0 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

Bottom: 4.5 V

※ Notes :

1. 250μ s Pulse Test

2. T

C = 25

℃

V

DS, Drain-Source Voltage [V]

Typical Characteristics

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

Figure 2. Transfer Characteristics

Figure 1. On-Region Characteristics

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