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FQP6N45 数据表(PDF) 1 Page - Fairchild Semiconductor |
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FQP6N45 数据表(HTML) 1 Page - Fairchild Semiconductor |
1 / 8 page QFET QFET QFET QFETTM ©2000 Fairchild Semiconductor International January 2001 Rev. A1, January 2001 FQP6N45 450V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, electronic lamp ballast based on half bridge. Features • 6.2A, 450V, RDS(on) = 1.1Ω @VGS = 10 V • Low gate charge ( typical 16 nC) • Low Crss ( typical 11 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability Absolute Maximum Ratings T C = 25°C unless otherwise noted Thermal Characteristics Symbol Parameter FQP6N45 Units VDSS Drain-Source Voltage 450 V ID Drain Current - Continuous (TC = 25°C) 6.2 A - Continuous (TC = 100°C) 3.9 A IDM Drain Current - Pulsed (Note 1) 25 A VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 350 mJ IAR Avalanche Current (Note 1) 6.2 A EAR Repetitive Avalanche Energy (Note 1) 9.8 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25°C) 98 W - Derate above 25°C 0.78 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 °C Symbol Parameter Typ Max Units RθJC Thermal Resistance, Junction-to-Case -- 1.28 °C/W RθCS Thermal Resistance, Case-to-Sink 0.5 -- °C/W RθJA Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W ! " ! ! ! " " " ! " ! ! ! " " " S D G G S D |
类似零件编号 - FQP6N45 |
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类似说明 - FQP6N45 |
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