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FQPF12P20 数据表(PDF) 1 Page - Fairchild Semiconductor |
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FQPF12P20 数据表(HTML) 1 Page - Fairchild Semiconductor |
1 / 8 page ©2000 Fairchild Semiconductor International May 2000 Rev. B, May 2000 QFET QFET QFET QFETTM FQPF12P20 200V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters. Features • -7.3A, -200V, RDS(on) = 0.47Ω @VGS = -10 V • Low gate charge ( typical 31 nC) • Low Crss ( typical 30 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability Absolute Maximum Ratings T C = 25°C unless otherwise noted Thermal Characteristics Symbol Parameter FQPF12P20 Units VDSS Drain-Source Voltage -200 V ID Drain Current - Continuous (TC = 25°C) -7.3 A - Continuous (TC = 100°C) -4.6 A IDM Drain Current - Pulsed (Note 1) -29.2 A VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 810 mJ IAR Avalanche Current (Note 1) -7.3 A EAR Repetitive Avalanche Energy (Note 1) 5.0 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) -5.5 V/ns PD Power Dissipation (TC = 25°C) 50 W - Derate above 25°C 0.4 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 °C Symbol Parameter Typ Max Units RθJC Thermal Resistance, Junction-to-Case -- 2.5 °C/W RθJA Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W TO-220F FQPF Series G S D ● ● ● ● ● ● ● ● ● ● ● ● ▲ ▲ ▲ ▲ ▶ ▶ ▶ ▶ ! ! ! ! ! ! ! ! ! ! ! ! ● ● ● ● ● ● ● ● ● ● ● ● ▲ ▲ ▲ ▲ ▶ ▶ ▶ ▶ ! ! ! ! ! ! ! ! ! ! ! ! S D G |
类似零件编号 - FQPF12P20 |
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类似说明 - FQPF12P20 |
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