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FQPF12P20 数据表(PDF) 1 Page - Fairchild Semiconductor

部件名 FQPF12P20
功能描述  200V P-Channel MOSFET
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制造商  FAIRCHILD [Fairchild Semiconductor]
网页  http://www.fairchildsemi.com
标志 FAIRCHILD - Fairchild Semiconductor

FQPF12P20 数据表(HTML) 1 Page - Fairchild Semiconductor

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©2000 Fairchild Semiconductor International
May 2000
Rev. B, May 2000
QFET
QFET
QFET
QFETTM
FQPF12P20
200V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters.
Features
• -7.3A, -200V, RDS(on) = 0.47Ω @VGS = -10 V
• Low gate charge ( typical 31 nC)
• Low Crss ( typical 30 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Absolute Maximum Ratings T
C = 25°C unless otherwise noted
Thermal Characteristics
Symbol
Parameter
FQPF12P20
Units
VDSS
Drain-Source Voltage
-200
V
ID
Drain Current
- Continuous (TC = 25°C)
-7.3
A
- Continuous (TC = 100°C)
-4.6
A
IDM
Drain Current
- Pulsed
(Note 1)
-29.2
A
VGSS
Gate-Source Voltage
± 30
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
810
mJ
IAR
Avalanche Current
(Note 1)
-7.3
A
EAR
Repetitive Avalanche Energy
(Note 1)
5.0
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
-5.5
V/ns
PD
Power Dissipation (TC = 25°C)
50
W
- Derate above 25°C
0.4
W/°C
TJ, TSTG
Operating and Storage Temperature Range
-55 to +150
°C
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C
Symbol
Parameter
Typ
Max
Units
RθJC
Thermal Resistance, Junction-to-Case
--
2.5
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
--
62.5
°C/W
TO-220F
FQPF Series
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