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FQD8N25 数据表(PDF) 1 Page - Fairchild Semiconductor |
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FQD8N25 数据表(HTML) 1 Page - Fairchild Semiconductor |
1 / 9 page ©2000 Fairchild Semiconductor International May 2000 Rev. A, May 2000 QFET QFET QFET QFETTM FQD8N25 / FQU8N25 250V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supply. Features • 6.2A, 250V, RDS(on) = 0.55Ω @VGS = 10 V • Low gate charge ( typical 12 nC) • Low Crss ( typical 11 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability Absolute Maximum Ratings T C = 25°C unless otherwise noted Thermal Characteristics Symbol Parameter FQD8N25 / FQU8N25 Units VDSS Drain-Source Voltage 250 V ID Drain Current - Continuous (TC = 25°C) 6.2 A - Continuous (TC = 100°C) 3.9 A IDM Drain Current - Pulsed (Note 1) 24.8 A VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 120 mJ IAR Avalanche Current (Note 1) 6.2 A EAR Repetitive Avalanche Energy (Note 1) 5.0 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns PD Power Dissipation (TA = 25°C) * 2.5 W Power Dissipation (TC = 25°C) 50 W - Derate above 25°C 0.4 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 °C Symbol Parameter Typ Max Units RθJC Thermal Resistance, Junction-to-Case -- 2.5 °C/W RθJA Thermal Resistance, Junction-to-Ambient * -- 50 °C/W RθJA Thermal Resistance, Junction-to-Ambient -- 110 °C/W * When mounted on the minimum pad size recommended (PCB Mount) ! " ! ! ! " " " ! " ! ! ! " " " S D G I-PAK FQU Series D-PAK FQD Series G S D G S D |
类似零件编号 - FQD8N25 |
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类似说明 - FQD8N25 |
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