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FQD3P50 数据表(PDF) 3 Page - Fairchild Semiconductor |
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FQD3P50 数据表(HTML) 3 Page - Fairchild Semiconductor |
3 / 9 page ©2000 Fairchild Semiconductor International Rev. A, August 2000 0 2 4 6 8 10 121416 1820 0 2 4 6 8 10 12 V DS = -250V V DS = -100V V DS = -400V ※ Note : I D = -2.7 A Q G, Total Gate Charge [nC] 10 -1 10 0 10 1 0 200 400 600 800 1000 1200 C iss = Cgs + Cgd (Cds = shorted) C oss = Cds + Cgd C rss = Cgd ※ Notes : 1. V GS = 0 V 2. f = 1 MHz C rss C oss C iss V DS, Drain-Source Voltage [V] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 10 -1 10 0 150℃ ※ Notes : 1. V GS = 0V 2. 250μs Pulse Test 25℃ -V SD , Source-Drain Voltage [V] 02468 2 3 4 5 6 7 8 ※ Note : T J = 25 ℃ V GS = - 20V V GS = - 10V -I D , Drain Current [A] 2 468 10 10 -1 10 0 150℃ 25℃ -55℃ ※ Notes : 1. V DS = -50V 2. 250μs Pulse Test -V GS , Gate-Source Voltage [V] 10 -1 10 0 10 1 10 -2 10 -1 10 0 V GS Top : -15.0 V -10.0 V -8.0 V -7.0 V -6.5 V -6.0 V Bottom : -5.5 V ※ Notes : 1. 250μs Pulse Test 2. T C = 25 ℃ -V DS, Drain-Source Voltage [V] Typical Characteristics Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature Figure 2. Transfer Characteristics Figure 1. On-Region Characteristics |
类似零件编号 - FQD3P50 |
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类似说明 - FQD3P50 |
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