FQD17N08L datasheet(1/9 Pages) FAIRCHILD

部件名	FQD17N08L

功能描述	80V LOGIC N-Channel MOSFET

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制造商	FAIRCHILD [Fairchild Semiconductor]

网页	http://www.fairchildsemi.com

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December 2000

Rev. A2, December 2000

QFET

QFETTM

FQD17N08L / FQU17N08L

80V LOGIC N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

This advanced technology is especially tailored to minimize

on-state

resistance,

provide

superior

switching

performance, and withstand a high energy pulse in the

avalanche and commutation modes. These devices are

well suited for low voltage applications such as automotive,

high efficiency switching for DC/DC converters, and DC

motor control.

Features

• 12.9A, 80V, RDS(on) = 0.1Ω @VGS = 10 V

• Low gate charge ( typical 8.8 nC)

• Low Crss ( typical 29 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• Low level gate drive requirements allowing

direct operation from logic drives

Absolute Maximum Ratings T

C = 25°C unless otherwise noted

Thermal Characteristics

Symbol

Parameter

FQD17N08L / FQU17N08L

Units

VDSS

Drain-Source Voltage

80

V

ID

Drain Current

- Continuous (TC = 25°C)

12.9

A

- Continuous (TC = 100°C)

8.2

A

IDM

Drain Current

- Pulsed

(Note 1)

51.6

A

VGSS

Gate-Source Voltage

± 20

V

EAS

Single Pulsed Avalanche Energy

(Note 2)

100

mJ

IAR

Avalanche Current

(Note 1)

12.9

A

EAR

Repetitive Avalanche Energy

(Note 1)

4.0

mJ

dv/dt

Peak Diode Recovery dv/dt

(Note 3)

6.5

V/ns

PD

Power Dissipation (TA = 25°C) *

2.5

W

Power Dissipation (TC = 25°C)

40

W

- Derate above 25°C

0.32

W/°C

TJ, TSTG

Operating and Storage Temperature Range

-55 to +150

°C

TL

Maximum lead temperature for soldering purposes,

1/8” from case for 5 seconds

300

°C

Symbol

Parameter

Typ

Max

Units

RθJC

Thermal Resistance, Junction-to-Case

--

3.13

°C/W

RθJA

Thermal Resistance, Junction-to-Ambient *

--

50

°C/W

RθJA

Thermal Resistance, Junction-to-Ambient

--

110

°C/W

* When mounted on the minimum pad size recommended (PCB Mount)

! "

!

"

! "

!

"

S

D

G

I-PAK

FQU Series

D-PAK

FQD Series

G

S

D

G

S

D

类似零件编号 - FQD17N08L

制造商	部件名	数据表	功能描述
Fairchild Semiconductor	FQD17N08L	1Mb / 8P	N-Channel QFET짰 MOSFET 80 V, 12.9 A, 100 m廓
Fairchild Semiconductor	FQD17N08L	1Mb / 8P	N-Channel QFET MOSFET 80 V, 12.9 A, 100 m
Inchange Semiconductor ...	FQD17N08L	305Kb / 2P	isc N-Channel MOSFET Transistor 2023-10-07
Fairchild Semiconductor	FQD17N08LTF	1Mb / 8P	N-Channel QFET MOSFET 80 V, 12.9 A, 100 m
Fairchild Semiconductor	FQD17N08LTM	1Mb / 8P	N-Channel QFET짰 MOSFET 80 V, 12.9 A, 100 m廓

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