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FQD12N20L 数据表(PDF) 3 Page - Fairchild Semiconductor |
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FQD12N20L 数据表(HTML) 3 Page - Fairchild Semiconductor |
3 / 9 page Rev. A1, February 2001 ©2001 Fairchild Semiconductor Corporation 0 5 10 15 20 25 30 0 2 4 6 8 10 12 V DS = 100V V DS = 40V V DS = 160V ※ Note : I D = 11.6 A Q G, Total Gate Charge [nC] 10 -1 10 0 10 1 0 300 600 900 1200 1500 1800 C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd ※ Notes : 1. V GS = 0 V 2. f = 1 MHz C rss C oss C iss V DS , Drain-Source Voltage [V] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 10 -1 10 0 10 1 150℃ ※ Notes : 1. V GS = 0V 2. 250μs Pulse Test 25℃ V SD , Source-Drain voltage [V] 0 6 12 18 24 30 36 0.0 0.3 0.6 0.9 1.2 1.5 V GS = 5 V V GS = 10V I D , Drain Current [A] 02 468 10 10 -1 10 0 10 1 150℃ 25℃ -55℃ ※ Notes : 1. V DS = 30V 2. 250μs Pulse Test V GS, Gate-Source Voltage [V] 10 -1 10 0 10 1 10 -1 10 0 10 1 V GS Top : 10 V 8.0 V 6.0 V 5.0 V 4.5 V 4.0 V 3.5 V Bottom : 3.0 V ※ Notes : 1. 250μs Pulse Test 2. T C = 25℃ V DS , Drain-Source Voltage [V] Typical Characteristics Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature Figure 2. Transfer Characteristics Figure 1. On-Region Characteristics |
类似零件编号 - FQD12N20L |
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类似说明 - FQD12N20L |
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