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Document Number: 71831

S11-2000-Rev. J, 10-Oct-11

Vishay Siliconix

Si2302ADS

This document is subject to change without notice.

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon

Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and

Source-Drain Diode Forward Voltage

Threshold Voltage

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1

10

100

0.10

0.01

0.001

- 0.5

- 0.4

- 0.3

- 0.2

- 0.1

0.0

0.1

0.2

0.3

- 50

0

50

100

150

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power

0.00

0.04

0.08

0.12

0.16

0.20

0246

8

V

- Gate-to-Source Voltage (V)

GS

0.01

0.1

1.0

10

100

1000

Time (s)

10

8

4

0

2

6

Single Pulse

Normalized Thermal Transient Impedance, Junction-to-Ambient

Square Wave Pulse Duration (s)

2

1

0.1

0.01

1

600

0.2

0.1

0.05

0.02

Single Pulse

Duty Cycle = 0.5

10

100