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IRF3610SPBF 数据表(PDF) 1 Page - International Rectifier |
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IRF3610SPBF 数据表(HTML) 1 Page - International Rectifier |
1 / 9 page 02/18/11 www.irf.com 1 HEXFET® Power MOSFET Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits GD S Gate Drain Source PD - 97638 IRF3610SPbF D S G D2Pak IRF3610SPbF VDSS 100V RDS(on) typ. 9.3m Ω max. 11.6mΩ ID 103A S D G Absolute Maximum Ratings Symbol Parameter Units ID @ TC = 25°C ID @ TC = 100°C IDM Pulsed Drain Current d PD @TC = 25°C Maximum Power Dissipation W Linear Derating Factor W/°C VGS Gate-to-Source Voltage V dv/dt Peak Diode Recovery f V/ns TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds Avalanche Characteristics EAS Single Pulse Avalanche Energy (Thermally Limited) d mJ IAR Avalanche Current à A EAR Repetitive Avalanche Energy mJ Thermal Resistance Symbol Parameter Typ. Max. Units RθJC Junction-to-Case jk ––– 0.50 °C/W RθJA Junction-to-Ambient (PCB Mount) i ––– 40 460 See Fig. 14, 15, 22a, 22b 333 23 A °C 300 (1.6mm from case) Max. 103 73 410 Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V -55 to + 175 ± 20 2.2 |
类似零件编号 - IRF3610SPBF |
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类似说明 - IRF3610SPBF |
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