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FM25040B-GTR 数据表(PDF) 8 Page - Cypress Semiconductor |
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FM25040B-GTR 数据表(HTML) 8 Page - Cypress Semiconductor |
8 / 14 page FM25040B - 4Kb 5V SPI F-RAM Document Number: 001-86145 Rev. *A Page 8 of 14 Figure 9. Memory Write Figure 10. Memory Read Endurance Internally, a F-RAM operates with a read and restore mechanism. Therefore, endurance cycles are applied for each access: read or write. The F-RAM architecture is based on an array of rows and columns. Each access causes a cycle for an entire row. In the FM25040B, a row is 64 bits wide. Every 8-byte boundary marks the beginning of a new row. Endurance can be optimized by ensuring frequently accessed data is located in different rows. Regardless, F-RAM read and write endurance is effectively unlimited at the 20MHz clock speed. Even at 2000 accesses per second to the same row, 15 years time will elapse before 10 12 endurance cycles occur. 0 1 2 3 4 5 6 7 0 1 2 3 4 5 0 1 2 3 4 5 6 7 op-code 0 0 0 0 A 0 1 1 MSB Byte Address 7 6 5 4 3 2 CS SCK SI SO 1 6 0 7 LSB MSB LSB Data Out 0 7 Hi-Z 7 6 5 4 3 2 1 0 LSB 0 1 2 3 4 5 6 7 0 1 2 3 4 5 0 1 2 3 4 5 6 7 op-code 0 0 0 0 A 0 1 0 MSB Byte Address 7 6 5 4 3 2 CS SCK SI SO 1 6 0 7 LSB MSB LSB Data 7 6 5 4 3 2 1 0 0 7 Hi-Z |
类似零件编号 - FM25040B-GTR |
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类似说明 - FM25040B-GTR |
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