STB60NF06LT4 datasheet(5/16 Pages) STMICROELECTRONICS

部件名	STB60NF06LT4

功能描述	N-channel 60V - 0.012廓 - 60A - TO-220/D2PAK/TO-220FP STripFET??II Power MOSFET

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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5 / 16 page

STB60NF06L - STP60NF06L - STP60NF06LFP

Electrical characteristics

5/16

Table 5.

Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

ISDM

(1)

1.

Pulse width limited by safe operating area.

Source-drain current

(pulsed)

60

240

A

VSD

(2)

2.

Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

Forward on voltage

ISD = 60A, VGS = 0

1.3

V

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 60A, di/dt = 100A/µs,

VDD = 30V, Tj = 150°C

(see Figure 17)

110

250

4.5

ns

nC

A

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