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SI2316BDS-T1-GE3 数据表(PDF) 3 Page - Vishay Siliconix |
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SI2316BDS-T1-GE3 数据表(HTML) 3 Page - Vishay Siliconix |
3 / 9 page Document Number: 70445 S09-1503-Rev. B, 10-Aug-09 www.vishay.com 3 Vishay Siliconix Si2316BDS TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current and Gate Voltage Gate Charge 0 5 10 15 20 012345 VGS = 10 V thru 5 V VGS = 4 V VDS - Drain-to-Source Voltage (V) VGS = 3 V 0.00 0.04 0.08 0.12 0.16 0.20 04 8 12 16 20 ID VGS = 10 V - Drain Current (A) VGS = 4.5 V 0 2 4 6 8 10 024 6 8 ID = 3.9 A Qg - Total Gate Charge (nC) VDS = 16 V VDS = 24 V Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0 1 2 3 012345 VGS - Gate-to-Source Voltage (V) TJ = 25 °C TJ = 125 °C TJ = - 55 °C 0 100 200 300 400 500 06 12 18 24 30 Crss Coss Ciss VDS - Drain-to-Source Voltage (V) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) VGS = 10 V, I D = 3.9 A VGS = 4.5 V, ID = 3.3 A |
类似零件编号 - SI2316BDS-T1-GE3 |
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类似说明 - SI2316BDS-T1-GE3 |
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