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FMC7G10US60 数据表(PDF) 3 Page - Fairchild Semiconductor |
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FMC7G10US60 数据表(HTML) 3 Page - Fairchild Semiconductor |
3 / 9 page ©2001 Fairchild Semiconductor Corporation FMC7G10US60 Rev. A4 Electrical Characteristics of the DIODE @ Inverter & Brake T C = 25°C unless otherwise noted Electrical Characteristics of the DIODE @ Converter T C = 25°C unless otherwise noted Thermal Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units VFM Diode Forward Voltage IF = 10A TC = 25°C -- 1.8 2.8 V TC = 100°C -- 1.75 -- trr Diode Reverse Recovery Time IF = 10A di / dt = 20 A/us TC = 25°C -- 90 130 ns TC = 100°C -- 110 -- Irr Diode Peak Reverse Recovery Current TC = 25°C -- 0.7 1.2 A TC = 100°C -- 1 -- Qrr Diode Reverse Recovery Charge TC = 25°C -- 32 70 nC TC = 100°C -- 55 -- Symbol Parameter Test Conditions Min. Typ. Max. Units VFM Diode Forward Voltage IF = 10A TC = 25°C -- 1.1 1.5 V TC = 100°C -- 1.0 -- IRRM Repetitive Reverse Current VR = VRRM TC = 25°C -- -- 8 mA TC = 100°C -- 5 -- Symbol Parameter Typ. Max. Units Inverter RθJC Junction-to-Case (IGBT Part, per 1/6 Module) -- 3.47 °C/W RθJC Junction-to-Case (DIODE Part, per 1/6 Module) -- 4.0 °C/W Brake RθJC Junction-to-Case (IGBT Part) -- 3.47 °C/W RθJC Junction-to-Case (DIODE Part) -- 4.0 °C/W Converter RθJC Junction-to-Case (DIODE Part, per 1/6 Module) -- 3.6 °C/W Weight Weight of Module 60 -- g |
类似零件编号 - FMC7G10US60 |
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类似说明 - FMC7G10US60 |
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