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FMBA0656 数据表(PDF) 1 Page - Fairchild Semiconductor |
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FMBA0656 数据表(HTML) 1 Page - Fairchild Semiconductor |
1 / 2 page FMBA0656 NPN & PNP Complementary Dual Transistor SuperSOT- 6 Surface Mount Package Absolute Maximum Ratings TA = 25°C unless otherwise noted °C/W 180 Thermal Resistance, Junction to Ambient RθJA °C 150 Junction Temperature TJ °C -55 to +150 Storage Temperature Range TSTG W 0.7 Power Dissipation @Ta = 25°C* PD mA 500 Collector Current (continuous) IC V 4 Emitter-Base Voltage VEBO V 80 Collector-Base Voltage VCBO V 80 Collector-Emitter Voltage VCEO Units Value Parameter Symbol *Pd total, for both transistors. For each transistor, Pd = 350mW. Electrical Characteristics TA = 25°C unless otherwise noted V 4 Ie = 100 uA Emitter to Base Voltage BVEBO V 80 Ic = 100 uA Collector to Base Voltage BVCBO V 80 Ic = 1.0 mA Collector to Emitter Voltage BVCEO Units Max Min Test Conditions Parameter Symbol © 1997 Fairchild Semiconductor Corporation Page 1 of 2 fmba0656.lwpPr33&73(Y3) Package: SuperSOT-6 Device Marking: .003 Note: The " . " (dot) signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. This device was designed for general purpose amplifier applications at collector currents to 300mA. Sourced from Process 33 (NPN) and Process 73 (PNP). Discrete Power & Signal Technologies C2 E1 C1 B2 E2 B1 |
类似零件编号 - FMBA0656 |
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类似说明 - FMBA0656 |
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