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STAC2932BW 数据表(PDF) 1 Page - STMicroelectronics |
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STAC2932BW 数据表(HTML) 1 Page - STMicroelectronics |
1 / 14 page January 2012 Doc ID 15497 Rev 5 1/14 14 STAC2932B HF/VHF/UHF RF power N-channel MOSFETs Features ■ Gold metallization ■ Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 300 W min. with 20 dB gain @ 175 MHz ■ In compliance with the 2002/95/EC European directive ■ ST air cavity packaging technology - STAC™ package Description The STAC2932B is a gold metallized N-channel MOS field-effect RF power transistor, intended for use in 50 V DC large signal applications up to 250 MHz. The STAC2932B benefits from the latest generation of efficient, patent-pending package technology, otherwise known as STAC™ Figure 1. Pin connection STAC244B Air cavity 1 1 2 2 3 1. Drain 2. Gate 3. Source (Bottom side) Table 1. Device summary Order code Marking Base qty. Package Packaging STAC2932BW STAC2932(1) 20 STAC244B Tray 1. For more details please refer to Chapter 7: Marking, packing and shipping specifications. www.st.com |
类似零件编号 - STAC2932BW |
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类似说明 - STAC2932BW |
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