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STU12N65M5 数据表(PDF) 5 Page - STMicroelectronics |
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STU12N65M5 数据表(HTML) 5 Page - STMicroelectronics |
5 / 23 page STD/F/I/P/U12N65M5 Electrical characteristics Doc ID 15428 Rev 5 5/23 Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max Unit td (v) tr (v) tf (i) tc(off) Voltage delay time Voltage rise time Current fall time Crossing time VDD = 400 V, ID = 5 A, RG = 4.7 Ω, VGS = 10 V (see Figure 21 and Figure 24) - 22.6 17.6 15.6 23.4 - ns ns ns ns Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD ISDM (1) 1. Pulse width limited by safe operating area Source-drain current Source-drain current (pulsed) 8.5 34 A A VSD (2) 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Forward on voltage ISD = 8.5 A, VGS = 0 1.5 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 8.5 A, di/dt = 100 A/µs VDD = 100 V (see Figure 24) 230 2.2 19 ns µC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 8.5 A, di/dt = 100 A/µs VDD = 100 V, Tj = 150 °C (see Figure 24) 280 2.7 19 ns µC A |
类似零件编号 - STU12N65M5 |
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类似说明 - STU12N65M5 |
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