数据搜索系统,热门电子元器件搜索 |
|
SI5855DC-T1-E3 数据表(PDF) 4 Page - Vishay Siliconix |
|
SI5855DC-T1-E3 数据表(HTML) 4 Page - Vishay Siliconix |
4 / 9 page www.vishay.com 4 Document Number: 72232 S10-0547-Rev. C, 08-Mar-10 Vishay Siliconix Si5855DC MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 TJ = 150 °C 10 1 VSD - Source-to-Drain Voltage (V) TJ = 25 °C - 0.2 - 0.1 0.0 0.1 0.2 0.3 0.4 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power 0.0 0.1 0.2 0.3 0.4 0 1234 5 ID = 2.7 A VGS - Gate-to-Source Voltage (V) 0 30 50 10 20 Time (s) 40 1 100 600 10 10-1 10-2 10-4 10-3 Safe Operating Area 100 1 0.1 1 10 100 0.01 10 TA = 25 °C Single Pulse 0.1 ID(on) Limited * DS(on) Limited by R BVDSS Limited P(t) = 0.1 P(t) = 0.01 P(t) = 0.001 P(t) = 10 VDS - Drain-to-Source Voltage (V) *V GS > minimum VGS at which RDS(on) is specified IDM Limited P(t) = 1 DC |
类似零件编号 - SI5855DC-T1-E3 |
|
类似说明 - SI5855DC-T1-E3 |
|
|
链接网址 |
隐私政策 |
ALLDATASHEETCN.COM |
ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |