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SI5855DC-T1-E3 数据表(PDF) 1 Page - Vishay Siliconix

部件名 SI5855DC-T1-E3
功能描述  P-Channel 1.8 V (G-S) MOSFET with Schottky Diode
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制造商  VISHAY [Vishay Siliconix]
网页  http://www.vishay.com
标志 VISHAY - Vishay Siliconix

SI5855DC-T1-E3 数据表(HTML) 1 Page - Vishay Siliconix

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Vishay Siliconix
Si5855DC
Document Number: 72232
S10-0547-Rev. C, 08-Mar-10
www.vishay.com
1
P-Channel 1.8 V (G-S) MOSFET with Schottky Diode
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
TrenchFET® Power MOSFETs
Ultra Low Vf Schottky
Si5853DC Pin Compatible
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
Charging Circuit in Portable Devices
MOSFET PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)ID (A)
- 20
0.110 at VGS = - 4.5 V
- 3.6
0.160 at VGS = - 2.5 V
- 3.0
0.240 at VGS = - 1.8 V
- 2.4
SCHOTTKY PRODUCT SUMMARY
VKA (V)
Vf (V)
Diode Forward Voltage
IF (A)
20
0.375 V at 1 A
1.0
Bottom View
1206-8 ChipFET
®
A
A
S
G
K
K
D
D
1
Marking Code
JB
XXX
Lot Traceability
and Date Code
Part # Code
Ordering Information: Si5855DC-T1-E3 (Lead (Pb)-free)
Si5855DC-T1-GE3 (Lead (Pb)-free and Halogen-free)
K
A
S
G
D
P-Channel MOSFET
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. See reliability manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result
of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure
adequate bottom side solder interconnection.
c. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
5 s
Steady State
Unit
Drain-Source Voltage (MOSFET)
VDS
- 20
V
Reverse Voltage (Schottky)
VKA
20
Gate-Source Voltage (MOSFET)
VGS
± 8
Continuous Drain Current (TJ = 150 °C) (MOSFET)
a
TA = 25 °C
ID
- 3.6
- 2.7
A
TA = 85 °C
- 2.6
- 1.9
Pulsed Drain Current (MOSFET)
IDM
- 10
Continuous Source Current (MOSFET Diode Conduction)a
IS
- 1.8
- 0.9
Average Forward Current (Schottky)
IF
1.0
Pulsed Forward Current (Schottky)
IFM
7
Maximum Power Dissipation (MOSFET)a
TA = 25 °C
PD
2.1
1.1
W
TA = 85 °C
1.1
0.6
Maximum Power Dissipation (Schottky)a
TA = 25 °C
1.9
1.1
TA = 85 °C
1.0
0.56
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
Soldering Recommendations (Peak Temperature)b, c
260


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