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SI5855DC-T1-E3 数据表(PDF) 1 Page - Vishay Siliconix |
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SI5855DC-T1-E3 数据表(HTML) 1 Page - Vishay Siliconix |
1 / 9 page Vishay Siliconix Si5855DC Document Number: 72232 S10-0547-Rev. C, 08-Mar-10 www.vishay.com 1 P-Channel 1.8 V (G-S) MOSFET with Schottky Diode FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • Ultra Low Vf Schottky • Si5853DC Pin Compatible • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Charging Circuit in Portable Devices MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω)ID (A) - 20 0.110 at VGS = - 4.5 V - 3.6 0.160 at VGS = - 2.5 V - 3.0 0.240 at VGS = - 1.8 V - 2.4 SCHOTTKY PRODUCT SUMMARY VKA (V) Vf (V) Diode Forward Voltage IF (A) 20 0.375 V at 1 A 1.0 Bottom View 1206-8 ChipFET ® A A S G K K D D 1 Marking Code JB XXX Lot Traceability and Date Code Part # Code Ordering Information: Si5855DC-T1-E3 (Lead (Pb)-free) Si5855DC-T1-GE3 (Lead (Pb)-free and Halogen-free) K A S G D P-Channel MOSFET Notes: a. Surface mounted on 1" x 1" FR4 board. b. See reliability manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 5 s Steady State Unit Drain-Source Voltage (MOSFET) VDS - 20 V Reverse Voltage (Schottky) VKA 20 Gate-Source Voltage (MOSFET) VGS ± 8 Continuous Drain Current (TJ = 150 °C) (MOSFET) a TA = 25 °C ID - 3.6 - 2.7 A TA = 85 °C - 2.6 - 1.9 Pulsed Drain Current (MOSFET) IDM - 10 Continuous Source Current (MOSFET Diode Conduction)a IS - 1.8 - 0.9 Average Forward Current (Schottky) IF 1.0 Pulsed Forward Current (Schottky) IFM 7 Maximum Power Dissipation (MOSFET)a TA = 25 °C PD 2.1 1.1 W TA = 85 °C 1.1 0.6 Maximum Power Dissipation (Schottky)a TA = 25 °C 1.9 1.1 TA = 85 °C 1.0 0.56 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Soldering Recommendations (Peak Temperature)b, c 260 |
类似零件编号 - SI5855DC-T1-E3 |
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类似说明 - SI5855DC-T1-E3 |
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