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FDZ203N 数据表(PDF) 2 Page - Fairchild Semiconductor

部件名 FDZ203N
功能描述  N-Channel 2.5V Specified PowerTrench BGA MOSFET
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制造商  FAIRCHILD [Fairchild Semiconductor]
网页  http://www.fairchildsemi.com
标志 FAIRCHILD - Fairchild Semiconductor

FDZ203N 数据表(HTML) 2 Page - Fairchild Semiconductor

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FDZ203N Rev.E6(W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
20
V
∆BVDSS
∆T
J
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, Referenced to 25°C
14
mV/
°C
IDSS
Zero Gate Voltage Drain Current
VDS = 16 V,
VGS = 0 V
1
µA
IGSSF
Gate–Body Leakage, Forward
VGS = 12 V,
VDS = 0 V
100
nA
IGSSR
Gate–Body Leakage, Reverse
VGS = –12 V,
VDS = 0 V
–100
nA
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
0.6
0.8
1.5
V
∆VGS(th)
∆T
J
Gate Threshold Voltage
Temperature Coefficient
ID = 250 µA, Referenced to 25°C
–3
mV/
°C
RDS(on)
Static Drain–Source
On–Resistance
VGS = 4.5 V,
ID = 7.5 A
VGS = 2.5 V,
ID = 5.5 A
VGS = 4.5 V, ID = 7.5 A, TJ=125°C
14
20
20
18
30
28
m
ID(on)
On–State Drain Current
VGS = 4.5 V,
VDS = 5 V
20
A
gFS
Forward Transconductance
VDS = 10 V,
ID = 7.5 A
33
S
Dynamic Characteristics
Ciss
Input Capacitance
1127
pF
Coss
Output Capacitance
268
pF
Crss
Reverse Transfer Capacitance
VDS = 10 V,
V GS = 0 V,
f = 1.0 MHz
134
pF
Switching Characteristics (Note 2)
td(on)
Turn–On Delay Time
8
16
ns
tr
Turn–On Rise Time
11
20
ns
td(off)
Turn–Off Delay Time
26
42
ns
tf
Turn–Off Fall Time
VDD = 10V,
ID = 1 A,
VGS = 4.5 V,
RGEN = 6 Ω
8
16
ns
Qg
Total Gate Charge
11
15
nC
Qgs
Gate–Source Charge
2
nC
Qgd
Gate–Drain Charge
VDS = 10 V,
ID = 7.5 A,
VGS = 4.5 V
3
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
1.3
A
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V,
IS = 1.3 A
(Note 2)
0.7
1.2
V
trr
Diode Reverse Recovery Time
20
nS
Qrr
Diode Reverse Recovery Charge
IF = 9A,
diF/dt = 100 A/µs
14
nC
Notes:
1.
RθJA is determined with the device mounted on a 1 in² 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to
the circuit board side of the solder ball, RθJB, is defined for reference. For RθJC, the thermal reference point for the case is defined as the top surface of the
copper chip carrier. RθJC and RθJB are guaranteed by design while RθJA is determined by the user's board design.
a)
67 °C/W when
mounted on a 1in
2 pad
of 2 oz copper, 1.5” x
1.5” x 0.062” thick
PCB
b)
155 °C/W when mounted
on a minimum pad of 2 oz
copper
Scale 1 : 1 on letter size paper
2. 2.
Pulse Test: Pulse Width < 300
µs, Duty Cycle < 2.0%


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