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TPDV825 数据表(PDF) 4 Page - STMicroelectronics |
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TPDV825 数据表(HTML) 4 Page - STMicroelectronics |
4 / 7 page Characteristics TPDVxx25 4/7 Doc ID 18268 Rev 2 Figure 9. Safe turn-off operating area Figure 5. Relative variation of gate trigger current and holding current versus junction temperature Figure 6. Non repetitive surge peak on-state current versus number of cycles I,I ,I [T ] / GT H L j I ,I ,I [T =25°C] GT H L j T (°C) j IGT IH & IL 2.5 2 1.5 1 0.5 0 -20 -30 -40 0 10 -10 20 40 30 50 60 70 80 90 100 110 120 130 I (A) TSM Number of cycles T initial=25°C j 200 150 100 50 0 1 10 100 1000 One cycle t = 20 ms Figure 7. Non-repetitive surge peak on-state current for a sinusoidal pulse and corresponding values of I2t Figure 8. On-state characteristics (maximum values) I (A), I t (A s) TSM 22 t (ms) p I t 2 ITSM T initial = 25°C j 100 1000 1 2 510 I (A) TM 1000 100 10 1 12 3 4 5 6 V (V) TM V =1.1V R =19m T max.: j t0 d Ω Tj=max T =25°C j (dV/dt)c(V/µs) 1000 100 10 1 (dI/dt)c(A/ms) T initial = 25°C j 1 10 100 |
类似说明 - TPDV825 |
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