FDS6680S Rev C (W)

SyncFET Schottky Body Diode

Characteristics

Fairchild’s SyncFET process embeds a Schottky diode

in parallel with PowerTrench MOSFET.

This diode

exhibits similar characteristics to a discrete external

Schottky diode in parallel with a MOSFET. Figure 22

shows the reverse recovery characteristic of the

FDS6984S.

Figure 22. FDS6984S SyncFET body

diode reverse recovery characteristic.

For comparison purposes, Figure 23 shows the reverse

recovery characteristics of the body diode of an

equivalent size MOSFET produced without SyncFET

(FDS6690A).

Figure 23. Non-SyncFET (FDS6690A) body

diode reverse recovery characteristic.

Schottky barrier diodes exhibit significant leakage at

high temperature and high reverse voltage. This will

increase the power in the device.

0.00001

0.0001

0.001

0.01

0.1

0

10

20

30

125

25

Figure 24. SyncFET body diode reverse

leakage versus drain-source voltage and

temperature.

10nS/DIV

10nS/DIV

0V