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FDS6961 数据表(PDF) 1 Page - Fairchild Semiconductor |
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FDS6961 数据表(HTML) 1 Page - Fairchild Semiconductor |
1 / 8 page April 1999 FDS6961A Dual N-Channel Logic Level PowerTrench TM MOSFET General Description Features Absolute Maximum Ratings T A = 25 oC unless other wise noted Symbol Parameter Ratings Units V DSS Drain-Source Voltage 30 V V GSS Gate-Source Voltage ±20 V I D Drain Current - Continuous (Note 1a) 3.5 A - Pulsed 14 P D Power Dissipation for Single Operation (Note 1) 2 W Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1 (Note 1c) 0.9 T J,TSTG Operating and Storage Temperature Range -55 to 150 °C THERMAL CHARACTERISTICS RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W FDS6961A Rev.C 3.5 A, 30 V. R DS(ON) = 0.090 Ω @ V GS = 10 V R DS(ON) = 0.140 Ω @ V GS = 4.5 V. Fast switching speed. Low gate charge (2.1nC typical). High performance trench technology for extremely low R DS(ON). High power and current handling capability. SOT-23 SuperSOT TM-8 SOIC-16 SO-8 SOT-223 SuperSOT TM-6 These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. S1 D1 S2 G1 SO-8 D2 D2 D1 G2 FDS 6961A pin 1 1 5 7 8 2 3 4 6 © 1999 Fairchild Semiconductor Corporation |
类似零件编号 - FDS6961 |
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类似说明 - FDS6961 |
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