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FDS6690 数据表(PDF) 4 Page - Fairchild Semiconductor |
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FDS6690 数据表(HTML) 4 Page - Fairchild Semiconductor |
4 / 8 page FDS6690 Rev.C 0 5 10 15 20 25 0 2 4 6 8 10 Q , GATE CHARGE (nC) g I = 10A D 10V 15V V = 5V DS Figure 10. Single Pulse Maximum Power Dissipation. Figure 8. Capacitance Characteristics. Figure 7. Gate Charge Characteristics. Figure 9. Maximum Safe Operating Area . Typical Electrical And Thermal Characteristics Figure 11. Transient Thermal Response Curve . Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. 0.0001 0.001 0.01 0.1 1 10 100 300 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 t , TIME (sec) 1 Single Pulse D = 0.5 0.1 0.05 0.02 0.01 0.2 Duty Cycle, D = t /t 1 2 R (t) = r(t) * R R = 125°C/W θJA θJA θJA T - T = P * R (t) θJA A J P(pk) t1 t 2 0.1 0.5 1 2 5 10 30 100 200 500 1000 2000 V , DRAIN TO SOURCE VOLTAGE (V) DS Ciss f = 1 MHz V = 0V GS Coss Crss 0.05 0.1 0.2 0.5 1 2 5 10 20 30 50 0.01 0.1 0.5 3 10 30 100 V , DRAIN-SOURCE VOLTAGE (V) DS RDS(ON) LIMIT V = 10V SINGLE PULSE R =125°C/W T = 25°C GS A θJA DC 1s 10ms 100ms 10s 1ms 100us 0.01 0.1 0.5 1 10 50 100 300 0 5 10 15 20 25 30 SINGLE PULSE TIME (SEC) SINGLE PULSE R =125° C/W T = 25°C θJA A |
类似零件编号 - FDS6690 |
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类似说明 - FDS6690 |
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