数据搜索系统,热门电子元器件搜索 |
|
FDS6675 数据表(PDF) 2 Page - Fairchild Semiconductor |
|
FDS6675 数据表(HTML) 2 Page - Fairchild Semiconductor |
2 / 5 page Electrical Characteristics (T A = 25 OC unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BV DSS Drain-Source Breakdown Voltage V GS = 0 V, I D = -250 µA -30 V ∆BV DSS/∆TJ Breakdown Voltage Temp. Coefficient I D = -250 µA, Referenced to 25 oC -22 mV/ oC I DSS Zero Gate Voltage Drain Current V DS = -24 V, VGS = 0 V -1 µA T J = 55°C -10 µA I GSSF Gate - Body Leakage, Forward V GS = 20 V, VDS = 0 V 100 nA I GSSR Gate - Body Leakage, Reverse V GS = -20 V, VDS = 0 V -100 nA ON CHARACTERISTICS (Note 2) V GS(th) Gate Threshold Voltage V DS = VGS, ID = -250 µA -1 -1.7 -3 V ∆V GS(th)/∆TJ Gate Threshold Voltage Temp. Coefficient I D = 250 µA, Referenced to 25 oC 4.3 mV/ oC R DS(ON) Static Drain-Source On-Resistance V GS = -10 V, I D = -11 A 0.011 0.014 Ω T J =125°C 0.016 0.023 V GS = -4.5 V, I D = -9 A 0.015 0.02 I D(ON) On-State Drain Current V GS = -10 V, VDS = -5 V -50 A g FS Forward Transconductance V DS = -10 V, I D = -11 A 32 S DYNAMIC CHARACTERISTICS C iss Input Capacitance V DS = -15 V, VGS = 0 V, f = 1.0 MHz 3000 pF C oss Output Capacitance 870 pF C rss Reverse Transfer Capacitance 360 pF SWITCHING CHARACTERISTICS (Note 2) t D(on) Turn - On Delay Time V DS = -15 V, I D = -1 A 12 22 ns t r Turn - On Rise Time V GEN = -10 V, RGEN = 6 Ω 16 27 ns t D(off) Turn - Off Delay Time 50 80 ns t f Turn - Off Fall Time 100 140 ns Q g Total Gate Charge V DS = -15 V, I D = -11 A, 30 42 nC Q gs Gate-Source Charge V GS = -5 V 9 nC Q gd Gate-Drain Charge 11 nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS I S Maximum Continuous Drain-Source Diode Forward Current -2.1 A V SD Drain-Source Diode Forward Voltage V GS = 0 V, IS = -2.1 A (Note 2) -0.72 -1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. FDS6675 Rev.C1 c. 125 OC/W on a 0.006 in2 pad of 2oz copper. b. 105 OC/W on a 0.04 in2 pad of 2oz copper. a. 50 OC/W on a 1 in2 pad of 2oz copper. |
类似零件编号 - FDS6675 |
|
类似说明 - FDS6675 |
|
|
链接网址 |
隐私政策 |
ALLDATASHEETCN.COM |
ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |