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FDS4410 数据表(PDF) 1 Page - Fairchild Semiconductor |
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FDS4410 数据表(HTML) 1 Page - Fairchild Semiconductor |
1 / 8 page April 1998 FDS4410 Single N-Channel Logic Level PWM Optimized PowerTrench TM MOSFET General Description Features Absolute Maximum Ratings T A = 25 oC unless other wise noted Symbol Parameter FDS4410 Units V DSS Drain-Source Voltage 30 V V GSS Gate-Source Voltage ±20 V I D Drain Current - Continuous (Note 1a) 10 A - Pulsed 50 P D Power Dissipation for Single Operation (Note 1a) 2.5 W (Note 1b) 1.2 (Note 1c) 1 T J,TSTG Operating and Storage Temperature Range -55 to 150 °C THERMAL CHARACTERISTICS RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W FDS4410 Rev.B1 10 A, 30 V. R DS(ON) = 0.0135 Ω @ V GS = 10 V R DS(ON) = 0.0200 Ω @ V GS = 4.5 V. Optimized for use in switching DC/DC converters with PWM controllers. Very fast switching . Low gate charge (typical 22 nC). SOT-23 SuperSOT TM-8 SOIC-16 SO-8 SOT-223 SuperSOT TM-6 This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. The MOSFET features faster switching and lower gate charge than other MOSFETs with comparable R DS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. 1 6 7 8 2 4 3 5 S D S S SO-8 D D D G pin 1 FDS 4410 © 1998 Fairchild Semiconductor Corporation |
类似零件编号 - FDS4410 |
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类似说明 - FDS4410 |
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