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FDN340P 数据表(PDF) 4 Page - Fairchild Semiconductor |
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FDN340P 数据表(HTML) 4 Page - Fairchild Semiconductor |
4 / 8 page FDN340P Rev C (W) Typical Characteristics 0 2 4 6 8 10 0 1 2 3 4 5 Q , GATE CHARGE (nC) G V = -5V DS -15V I = -2A D -10V 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 1000 2000 -V , DRAIN TO SOURCE VOLTAGE (V) DS Ciss f = 1 MHz V = 0 V GS Coss Crss Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 0.1 0.2 0.5 1 2 5 10 20 50 0.01 0.03 0.1 0.3 1 3 10 30 -V , DRAIN-SOURCE VOLTAGE (V) RDS(ON) LIMIT DS V = -4.5V SINGLE PULSE R = 270°C/W T = 25°C θJA GS A DC 1s 100ms 10ms 1ms 10s 0.001 0.01 0.1 1 10 100 0 10 20 30 40 50 SINGLE PULSE TIME (SEC) SINGLE PULSE R = 270° C/W T = 25°C θJA A Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 0.0001 0.001 0.01 0.1 1 10 100 300 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 t , TIME (sec) R (t) = r(t) * R R = 270 °C/W Duty Cycle, D = t /t 1 2 θJA θJA θJA T - T = P * R (t) θJA A J P(pk) t1 t 2 1 Single Pulse D = 0.5 0.1 0.05 0.02 0.01 0.2 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. |
类似零件编号 - FDN340P |
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类似说明 - FDN340P |
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