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FDG6321 数据表(PDF) 5 Page - Fairchild Semiconductor |
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FDG6321 数据表(HTML) 5 Page - Fairchild Semiconductor |
5 / 12 page FDG6321C Rev. D Typical Electrical Characteristics: N-Channel (continued) Figure 10. Single Pulse Maximum Power Dissipation. Figure 8. Capacitance Characteristics. Figure 7. Gate Charge Characteristics. Figure 9. Maximum Safe Operating Area. 0.1 1 2 5 10 25 40 0.01 0.02 0.05 0.1 0.2 0.5 1 3 V , DRAI N-SOURCE VOLTAGE (V) DS DC 1s 100ms 10s RDS(ON) LIMIT V = 4.5V SINGLE PULSE R = 415 °C/W T = 25°C GS A θJA 10ms 1ms 0.1 0.3 1 2 5 10 25 3 10 30 70 200 V , DRAIN TO SOURCE VOLTAGE (V) DS Ciss f = 1 MHz V = 0V GS Coss Crss 0.0001 0.001 0.01 0.1 1 10 200 0 10 20 30 40 50 SINGLE PULSE TIME (SEC) SINGLE PULSE R =415°C/W T = 25°C θJA A 0 0.4 0.8 1.2 1.6 2 0 1 2 3 4 5 Q , GATE CHARGE (nC) g I = 0.5A D 10V 15V V = 5V DS |
类似零件编号 - FDG6321 |
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类似说明 - FDG6321 |
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