October 2000

PRELIMINARY

2000 Fairchild Semiconductor Corporation

FDG6308P Rev B(W)

FDG6308P

P-Channel 1.8V Specified PowerTrench







General Description

This

P-Channel

1.8V

specified

MOSFET

uses

Fairchild’s advanced low voltage PowerTrench process.

It has been optimized for battery power management

applications.

Applications

• Battery management

• Load switch

Features

• –0.6 A, –20 V.

Ω @ V

Ω @ V

Ω @ V

• Low gate charge

• High performance trench technology for extremely

• Compact industry standard SC70-6 surface mount

package

S

G

D

D

G

S

Pin 1

SC70-6

S

G

D

D

G

S

6 or 3

5 or 2

4 or 1

1 or 4

2 or 5

3 or 6

The pinouts are symmetrical; pin 1 and pin 4 are interchangeable.

Absolute Maximum Ratings

Symbol

Parameter

Ratings

Units

Drain-Source Voltage

–20

V

Gate-Source Voltage

± 8

V

Drain Current

– Continuous

(Note 1)

–0.6

A

– Pulsed

–1.8

Power Dissipation for Single Operation

(Note 1)

0.3

W

Operating and Storage Junction Temperature Range

–55 to +150

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

(Note 1)

415

°C/W

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

.08

FDG6308P

7’’

8mm

3000 units