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FDG6308P 数据表(PDF) 4 Page - Fairchild Semiconductor |
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FDG6308P 数据表(HTML) 4 Page - Fairchild Semiconductor |
4 / 5 page FDG6308P Rev B (W) Typical Characteristics 0 1 2 3 4 5 0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 Qg, GATE CHARGE (nC) I D = -0.6A V DS = -5V -15V -10V 0 40 80 120 160 200 0 4 8 12 16 20 -VDS, DRAIN TO SOURCE VOLTAGE (V) CISS CRSS COSS f = 1MHz VGS = 0 V Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 0.01 0.1 1 10 0.1 1 10 100 -VDS, DRAIN-SOURCE VOLTAGE (V) DC 1s 100ms 10ms 1ms 100 µs RDS(ON) LIMIT VGS = -4.5V SINGLE PULSE RθJA = 415 oC/W TA = 25 oC 0 6 12 18 24 30 0.0001 0.001 0.01 0.1 1 10 100 SINGLE PULSE TIME (SEC) SINGLE PULSE RθJA = 415 oC/W TA = 25 oC Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 t1, TIME (sec) RθJA(t) = r(t) + RθJA RθJA = 415 °C/W TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 P(pk) t1 t2 SINGLE PULSE 0.01 0.02 0.05 0.1 0.2 D = 0.5 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1. Transient thermal response will change depending on the circuit board design. |
类似零件编号 - FDG6308P |
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类似说明 - FDG6308P |
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