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FDG328P 数据表(PDF) 4 Page - Fairchild Semiconductor |
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FDG328P 数据表(HTML) 4 Page - Fairchild Semiconductor |
4 / 5 page FDG328P Rev C(W) 0 1 2 3 4 5 01 23 45 Qg, GATE CHARGE (nC) ID = -1.5A VDS = - -15V -10V 0 100 200 300 400 500 600 0 5 10 15 20 -VDS, DRAIN TO SOURCE VOLTAGE (V) C ISS C RSS COSS f = 1MHz VGS = 0 V Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 0.01 0.1 1 10 100 0.1 1 10 100 -VDS, DRAIN-SOURCE VOLTAGE (V) DC 1s 100ms 10ms 1ms 100 µs R DS(ON) LIMIT VGS = -4.5V SINGLE PULSE RθJA = 260 oC/W T A = 25 oC 0 6 12 18 24 30 0.0001 0.001 0.01 0.1 1 10 100 SINGLE PULSE TIME (SEC) SINGLE PULSE RθJA = 260 oC/W T A = 25 oC Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) RθJA(t) = r(t) + RθJA RθJA = 260 °C/W TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 P(pk) t1 t2 SINGLE PULSE 0.01 0.02 0.05 0.1 0.2 D = 0.5 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient themal response will change depending on the circuit board design. |
类似零件编号 - FDG328P |
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类似说明 - FDG328P |
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