STP24NM60N datasheet(5/19 Pages) STMICROELECTRONICS

部件名	STP24NM60N

功能描述	N-channel 600 V, 0.168 廓, 17 A MDmesh??II Power MOSFET

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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5 / 19 page

STF24NM60N, STI24NM60N, STP24NM60N, STW24NM60N

Electrical characteristics

Doc ID 18047 Rev 3

5/19

Table 7.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max

Unit

td(on)

tr(v)

td(off)

tf(i)

Turn-on delay time

Voltage rise time

Turn-off-delay time

Fall time

VDD = 300 V, ID = 8.5 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 18)

-

11.5

16.5

73

37

-

ns

Table 8.

Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max

Unit

ISD

ISDM

(1)

1.

Pulse width limited by safe operating area

Source-drain current

Source-drain current (pulsed)

-

17

68

A

VSD

(2)

2.

Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Forward on voltage

ISD = 17 A, VGS = 0

-

1.6

V

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 17 A, di/dt = 100 A/µs

VDD= 60 V

(see Figure 20)

-

340

4.6

27

ns

µC

A

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 17 A, di/dt = 100 A/µs

VDD= 60 V TJ = 150 °C

(see Figure 20)

-

404

5.7

28

ns

µC

A

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