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FDG313N 数据表(PDF) 1 Page - Fairchild Semiconductor |
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FDG313N 数据表(HTML) 1 Page - Fairchild Semiconductor |
1 / 8 page FDG313N Rev. C FDG313N Digital FET, N-Channel July 2000 1998 Fairchild Semiconductor Corporation Absolute Maximum Ratings T A = 25°C unless otherwise noted Symbol Parameter FDG313N Units VDSS Drain-Source Voltage 25 V VGSS Gate-Source Voltage ± 8V ID Drain Current - Continuous (Note 1a) 0.95 A - Pulsed 2 Power Dissipation for Single Operation (Note 1a) 0.75 W (Note 1b) 0.55 PD (Note 1c) 0.48 TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C ESD Electrostatic Discharge Rating MIL-STD-883D Human Body Model (100pf / 1500 Ohm) 6kV Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1c) 260 °C/W Package Outlines and Ordering Information Device Marking Device Reel Size Tape Width Quantity .13 FDG313N 7’’ 8mm 3000 units General Description This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistor and small signal MOSFET. Applications • Load switch • Battery protection • Power management Features • 0.95 A, 25 V. R DS(on) = 0.45 Ω @ V GS = 4.5 V R DS(on) = 0.60 Ω @ V GS = 2.7 V. • Low gate charge (1.64 nC typical) • Very low level gate drive requirements allowing direct operation in 3V circuits (V GS(th) < 1.5V). • Gate-Source Zener for ESD ruggedness (>6kV Human Body Model). • Compact industry standard SC70-6 surface mount package. SC70-6 D S D G D D pin 1 3 5 6 4 1 2 3 |
类似零件编号 - FDG313N |
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类似说明 - FDG313N |
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