Silicon MOSFETs (Small Signal)

1

Publication date:June 2007

SJF00063AED

This product complies with the RoHS Directive (EU 2002/95/EC).

2SK1374G

Silicon N-channel MOSFET

For switching circuits

■ Features

• High-speed switching

• Wide frequency band

• Incorporating a built-in gate protection-diode

• Allowing 2.5 V drive

■ Absolute Maximum Ratings T

a

= 25°C

Parameter

Symbol

Rating

Unit

Drain-source voltage

50

V

Gate-source voltage (Drain open)

10

V

Drain current

50

mA

Peak drain current

100

mA

Power dissipation

150

mW

Channel temperature

150

°C

Storage temperature

−55 to +150

°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Drain-source surrender voltage

50

100

V

Drain-source cutoff current

= 20 V, V

GS

= 0

1.0

µA

Gate-source cutoff current

1.0

µA

Gate threshold voltage

0.5

0.8

1.1

V

Forward transfer admittance

Y

fs



= 10 mA, V

DS

= 5 V, f = 1 kHz

20

39

mS

Drain-source ON resistance

27

50

Ω

Short-circuit forward transfer capacitance

4.5

pF

(Common source)

Short-circuit output capacitance

4.1

pF

(Common source)

Reverse transfer capacitance

1.2

pF

(Common source)

1, 2

0.2

µs

1, 2

= 5 V, R

L

= 470 Ω, V

GS

= 2.5 V to 0 V

0.2

µs

■ Electrical Characteristics T

a

= 25°C

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *1: Pulse measurement

100

µF

50

Ω

470

Ω

90%

10%

10%

90%

■ Package

• Code

SMini3-F2

• Marking Symbol: 4V

• Pin Name

1: Gate

2: Source

3: Drain