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1N3070TR 数据表(PDF) 1 Page - Fairchild Semiconductor |
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1N3070TR 数据表(HTML) 1 Page - Fairchild Semiconductor |
1 / 2 page ©2004 Fairchild Semiconductor Corporation 1N3070, Rev. A Small Signal Diode Absolute Maximum Ratings * T A = 25°C unless otherwise noted * These ratings are limiting values above which the serviceability of the diode may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 200 degrees C. 2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Electrical Characteristics T A=25°C unless otherwise noted Symbol Parameter Value Units VRRM Maximum Repetitive Reverse Voltage 200 V IF(AV) Average Rectified Forward Current 500 mA IFSM Non-repetitive Peak Forward Surge Current Pulse Width = 1.0 second Pulse Width = 1.0 microsecond 1.0 4.0 A A TSTG Storage Temperature Range -65 to +200 °C TJ Operating Junction Temperature 175 °C Symbol Parameter Value Units PD Power Dissipation 500 mW RθJA Thermal Resistance, Junction to Ambient 300 °C Symbol Parameter Test Conditions Min. Max. Units VR Breakdown Voltage IR = 100µA 200 V VF Forward Voltage IF = 100mA 1.0 V IR Reverse Leakage VR = 175V VR = 175V, TA = 150°C 100 100 nA µA CT Total Capacitance VR = 0V, f = 1.0MHz 5 pF trr Reverse Recovery Time IF = IR = 30mA, RL = 100Ω 50 ns 1N3070 DO-35 COLOR BAND DENOTES CATHODE |
类似零件编号 - 1N3070TR |
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类似说明 - 1N3070TR |
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