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FDC636P 数据表(PDF) 4 Page - Fairchild Semiconductor |
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FDC636P 数据表(HTML) 4 Page - Fairchild Semiconductor |
4 / 4 page FDC636P Rev.B Figure 10. Single Pulse Maximum Power Dissipation. 0.1 0.2 0.5 1 2 5 10 20 20 50 100 200 400 600 1000 -V , DRAIN TO SOURCE VOLTAGE (V) DS Ciss f = 1 MHz V = 0 V GS Coss Crss Figure 8. Capacitance Characteristics. Figure 7. Gate Charge Characteristics. Figure 9. Maximum Safe Operating Area. Typical Electrical Characteristics (continued) 0 1 2 3 4 5 6 7 8 0 1 2 3 4 5 Q , GATE CHARGE (nC) g V = -5V DS -10V I = -2.8A D -15V 0.1 0.2 0.5 1 2 5 10 30 0.01 0.05 0.1 0.5 1 5 10 20 - V , DRAIN-SOURCE VOLTAGE (V) RDS(ON) LIMIT A DC DS 1s 100ms 10ms 1ms V = -4.5V SINGLE PULSE R =156 °C/W T = 25°C θJA GS A 100us 0.01 0.1 1 10 100 300 0 1 2 3 4 5 SINGLE PULSE TIME (SEC) SINGLE PULSE R =156°C/W T = 25°C θJA A 0.00001 0.0001 0.001 0.01 0.1 1 10 100 300 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 t , TIME (sec) 1 Single Pulse D = 0.5 0.1 0.05 0.02 0.01 0.2 Duty Cycle, D = t / t 1 2 R (t) = r(t) * R R = 156°C/W T - T = P * R (t) A J P(pk) t1 t 2 θJA θJA θJA θJA Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in note 1b. Transient thermal response will change depending on the circuit board design. |
类似零件编号 - FDC636P |
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类似说明 - FDC636P |
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