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AM4830NS 数据表(PDF) 1 Page - Analog Power |
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AM4830NS 数据表(HTML) 1 Page - Analog Power |
1 / 5 page 1 AM4830NS Analog Power PRELIMINARY Publication Order Number: DS-AM4830NS_E These miniature surface mount MOSFETs utilize a high cell density trench process to provide low r DS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. N-Channel 30-V (D-S) MOSFET •Low r DS(on) provides higher efficiency and extends battery life • Low thermal impedance copper leadframe SOIC-8 saves board space • Fast switching speed • High performance trench technology Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature Symbol Limit Units VDS 30 VGS ±20 TA=25 oC±13 TA=70 oC±11 IDM ±50 IS 2.3 A TA=25 oC3.1 TA=70 oC2.2 TJ, Tstg -55 to 150 oC Power Dissipation a PD Operating Junction and Storage Temperature Range W Continuous Source Current (Diode Conduction) a ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED) Parameter Pulsed Drain Current b V Gate-Source Voltage Drain-Source Voltage Continuous Drain Current a ID A Symbol Maximum Units Maximum Junction-to-Case a t <= 5 sec RθJC 25 oC/W Maximum Junction-to-Ambient a t <= 5 sec RθJA 50 oC/W THERMAL RESISTANCE RATINGS Parameter S S S G 1 2 3 4 SOIC-8 Top View D D D D 8 7 6 5 D S G N-Channel MOSFET K A Schottky Diode VDS (V) rDS(on) m(Ω)ID (A) 13.5 @ VGS = 10V 13 20 @ VGS = 4.5V 11 MOSFET PRODUCT SUMMARY 30 VSD (V) Diode ForwardVoltage 30 0.61 V@3.0A 3.0 SCHOTTKYPRODUCT SUMMARY VDS (V) IF(A) |
类似零件编号 - AM4830NS |
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类似说明 - AM4830NS |
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