AM2313P datasheet(1/5 Pages) ANALOGPOWER

部件名	AM2313P

功能描述	P - Channel Logic Level MOSFET

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制造商	ANALOGPOWER [Analog Power]

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AM2313P

Analog Power

July, 2002 - Rev. A

PRELIMINARY

Publication Order Number:

DS-AM2313_B

These miniature surface mount MOSFETs

utilize High Cell Density process. Low

rDS(on) assures minimal power loss and

conserves energy, making this device ideal

for use in power management circuitry.

Typical applications are voltage control

small signal switch, power management in

portable and battery-powered products and

most low current high side switch.

P - Channel Logic Level MOSFET

•Low r

DS(on) Provides Higher Efficiency and

Extends Battery Life

•

Fast Switch

•

Low Gate Charge

•

High Saturation Current

•

Miniature SOT-23 Surface Mount Package

Saves Board Space

Notes

a.

Surface Mounted on 1” x 1” FR4 Board.

b.

Pulse width limited by maximum junction temperature

Symbol

Maximum Units

t <= 5 sec

350

Steady-State

400

THERMAL RESISTANCE RATINGS

Parameter

oC/W

Maximum Junction-to-Ambient

a

RTHJA

VDS (V)

rDS(on) (Ω)ID (A)

10 @ VGS = -10 V

-0.2

20 @ VGS = -4.5V

-0.12

-60

PRODUCT SUMMARY

Symbol Maximum Units

VDS

-60

VGS

±20

TA=25

oC±0.12

TA=70

oC±0.09

IDM

±1

IS

0.24

A

TA=25

oC0.36

TA=70

oC0.29

TJ, Tstg -55 to 150

oC

Power Dissipation

a

PD

Operating Junction and Storage Temperature Range

W

Continuous Source Current (Diode Conduction)

a

ABSOLUTE MAXIMUM RATINGS (TA = 25

oC UNLESS OTHERWISE NOTED)

Parameter

Pulsed Drain Current

b

V

Gate-Source Voltage

Drain-Source Voltage

Continuous Drain Current

a

ID

A

D

S

G

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