NZT44H8 datasheet(2/4 Pages) FAIRCHILD

部件名	NZT44H8

功能描述	NPN Power Amplifier

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制造商	FAIRCHILD [Fairchild Semiconductor]

网页	http://www.fairchildsemi.com

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Electrical Characteristics

TA = 25°C unless otherwise noted

OFF CHARACTERISTICS

Symbol

Parameter

Test Conditions

Min

Max

Units

V(BR)CEO

Collector-Emitter Breakdown Voltage*

IC = 100 mA, IB = 0

60

V

ICBO

Collector-Cutoff Current

VCB = 60 V, IE = 0

10

µA

IEBO

Emitter-Cutoff Current

VEB = 5.0 V, IC = 0

100

µA

ON CHARACTERISTICS

hFE

DC Current Gain

IC = 2.0 A, VCE = 1.0 V

IC = 4.0 A, VCE = 1.0 V

60

40

VCE(sat)

Collector-Emitter Saturation Voltage

IC = 8.0 A, IB = 0.4 A

1.0

V

VBE(sat)

Base-Emitter On Voltage

IC = 8.0 A, IB = 0.8 A

1.5

V

VBE(on)

Base-Emitter On Voltage

IC = 10 mA, VCE = 2.0 V

0.52

0.65

V

SMALL SIGNAL CHARACTERISTICS

fT

Current Gain - Bandwidth Product

IC = 500 mA, VCE = 10 V,

50

MHz

DC Typical Characteristics

Collector-Emitter Saturation

Voltage vs Collector Current

P4Q

0.1

1

10

0

0.2

0.4

0.6

0.8

I

- COLLECTOR CURRENT (A)

C

ββ = 10

125 ºC

- 40 ºC

25 °C

Typical Pulsed Current Gain

vs Collector Current

0.01 0.02

0.05 0.1

0.2

0.5

1

2

5

10

0

50

100

150

200

I - COLLECTOR CURRENT (A)

C

125 ° C

25 °C

- 40 °C

Vce = 5V

NPN Power Amplifier

(continued)

类似零件编号 - NZT44H8

制造商	部件名	数据表	功能描述
Fairchild Semiconductor	NZT45C11	58Kb / 3P	PNP Current Driver Transistor
Fairchild Semiconductor	NZT45H8	141Kb / 4P	PNP Power Amplifier

More results

类似说明 - NZT44H8

制造商	部件名	数据表	功能描述
Fairchild Semiconductor	D44C8	142Kb / 3P	NPN Power Amplifier
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Samsung semiconductor	KSC2859	64Kb / 2P	NPN (LOW FREQUENCY POWER AMPLIFIER)
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