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TC58NVG0S3ETA00 数据表(PDF) 1 Page - Toshiba Semiconductor

部件名 TC58NVG0S3ETA00
功能描述  TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
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制造商  TOSHIBA [Toshiba Semiconductor]
网页  http://www.semicon.toshiba.co.jp/eng
标志 TOSHIBA - Toshiba Semiconductor

TC58NVG0S3ETA00 数据表(HTML) 1 Page - Toshiba Semiconductor

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TC58NVG0S3ETA00
2011-03-01C
1
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
1 GBIT (128M
× 8 BIT) CMOS NAND E
2
PROM
DESCRIPTION
The TC58NVG0S3E is a single 3.3V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable
Read-Only Memory (NAND E2PROM) organized as (2048
+ 64) bytes × 64 pages × 1024blocks.
The device has two 2112-byte static registers which allow program and read data to be transferred between the
register and the memory cell array in 2112-byte increments. The Erase operation is implemented in a single block
unit (128 Kbytes
+ 4 Kbytes: 2112 bytes × 64 pages).
The TC58NVG0S3E is a serial-type memory device which utilizes the I/O pins for both address and data
input/output as well as for command inputs. The Erase and Program operations are automatically executed making
the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still
cameras and other systems which require high-density non-volatile memory data storage.
FEATURES
• Organization
x8
Memory cell array
2112
× 64K × 8
Register
2112
× 8
Page size
2112 bytes
Block size
(128K
+ 4K) bytes
• Modes
Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy,
Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read
• Mode control
Serial input/output
Command control
• Number of valid blocks
Min 1004 blocks
Max 1024 blocks
• Power supply
VCC = 2.7V to 3.6V
• Access time
Cell array to register 25
µs max
Serial Read Cycle
25 ns min (CL=100pF)
• Program/Erase time
Auto Page Program
300
µs/page typ.
Auto Block Erase
2.5 ms/block typ.
• Operating current
Read (25 ns cycle)
30 mA max.
Program (avg.)
30 mA max
Erase (avg.)
30 mA max
Standby
50
µA max
• Package
TSOP I 48-P-1220-0.50 (Weight: 0.53 g typ.)


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