3

1997 Fairchild Semiconductor Corporation

NPN General Purpose Amplifier

This device is designed for low noise, high gain, general purpose

amplifier applications at collector currents from 1.0

µA to 50 mA.

Sourced from Process 07.

Absolute Maximum Ratings*

TA = 25°C unless otherwise noted

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

TA = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

Collector-Emitter Voltage

BC846 series

BC847 series

65

45

V

V

Collector-Base Voltage

BC846 series

BC847 series

80

50

V

V

Emitter-Base Voltage

6.0

V

Collector Current - Continuous

100

mA

Operating and Storage Junction Temperature Range

-55 to +150

°C

Symbol

Characteristic

Max

Units

*BC846 / BC847

Total Device Dissipation

Derate above 25

°C

325

2.8

mW

mW/

°C

Thermal Resistance, Junction to Ambient

357

°C/W

BC847A

BC847B

BC847C

SOT-23

Mark: 1E. / 1F. / 1G.

C

B

E

C

B

E

BC846A

BC846B

SOT-23

Mark: 1A. / 1B.