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ACE1101BEMT8X 数据表(PDF) 3 Page - Fairchild Semiconductor |
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ACE1101BEMT8X 数据表(HTML) 3 Page - Fairchild Semiconductor |
3 / 33 page 3 www.fairchildsemi.com ACE1101 Rev. C.8 Preliminary ACE1101 AC Electrical Characteristics for VCC = 2.2 to 5.5V Parameter Conditions MIN TYP MAX Units Instruction cycle time from 5.0V at 25 °C 0.9 1.00 1.1 µs internal clock - setpoint Internal clock voltage dependent 3.0V to 5.5V, ±5% frequency variation constant temperature Internal clock temperature 3.0V to 5.5V, ±10% dependent frequency variation full temperature range Internal clock frequency 3.0V to 4.5V for ±2% deviation for 0.5V drop ACE1101E, T=constant Crystal oscillator frequency (Note 1) 4 MHz External clock frequency (Note 2) 4 MHz EEPROM write time 3 10 ms Internal clock start up time (Note 2) 2 ms Oscillator start up time (Note 2) 2400 cycles Note 1: The maximum permissible frequency is guaranteed by design but not 100% tested. Note 2: The parameter is guaranteed by design but not 100% tested. ACE1101 Electrical Characteristics for programming All data valid at ambient temperature between 4.5V and 5.5V. See “EEPROM write time” in the AC characteristics for definition of the programming ready time. The following characteristics are guaranteed by design but are not 100% tested. Parameter Description MIN MAX Units t HI CLOCK high time 500 DC ns t LO CLOCK low time 500 DC ns t DIS SHIFT_IN setup time 100 ns t DIH SHIFT_IN hold time 100 ns t DOS SHIFT_OUT setup time 100 ns t DOH SHIFT_OUT hold time 900 ns t SV1, tSV2 LOAD supervoltage timing 50 us t LOAD1, tLOAD2, tLOAD3, tLOAD4 LOAD timing 5 us V SUPERVOLTAGE Supervoltage level 11.5 12.5 V |
类似零件编号 - ACE1101BEMT8X |
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类似说明 - ACE1101BEMT8X |
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