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ACE7401B 数据表(PDF) 1 Page - ACE Technology Co., LTD. |
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ACE7401B 数据表(HTML) 1 Page - ACE Technology Co., LTD. |
1 / 7 page ACE7401B P-Channel Enhancement Mode Field Effect Transistor VER 1.2 1 Description The ACE7401B uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. Features V DS(V)=-30V I D=-29A (VGS=-10V) R DS(ON)<13mΩ (VGS=-20V) R DS(ON)<14mΩ (VGS=-10V) R DS(ON)<17mΩ (VGS=-5V) Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS ±25 V Drain Current (Continuous) TA=25 OC ID -29 A TA=100 OC -23 Drain Current (Pulse) C IDM -60 Drain Current (Continuous) TA=25 OC IDSM -12 TA=75 OC -9.7 Power Dissipation B TA=25 OC PD 29 W TA=100 OC 12 Power Dissipation A TA=25 OC PDSM 3.1 TA=70 OC 2 Operating and Storage Temperature Range TJ,TSTG -55 to 150 OC Thermal Characteristics Parameter Symbol Typ Max Units Maximum Junction-to-Ambient A t≦10s RθJA 30 40 OC/W Maximum Junction-to-Ambient AD Steady-State 60 75 Maximum Junction-to-Lead Steady-State RθJL 3.5 4.2 |
类似零件编号 - ACE7401B |
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类似说明 - ACE7401B |
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