2SD1758TLR datasheet(2/3 Pages) LITTELFUSE

部件名	2SD1758TLR

功能描述	Medium power transistor (32V, 2A)

Download	3 Pages

Scroll/Zoom	100%

制造商	LITTELFUSE [Littelfuse]

网页	http://www.littelfuse.com

标志

2 / 3 page

2/2

www.rohm.com

○

c

2010.04 - Rev.C

Data Sheet

2SD1758 / 2SD1862

Packaging specifications and hFE

Type

hFE

TL

2500

TV2

2500

2SD1758

−

2SD1862

−

QR

Package

Taping

Code

Basic ordering

unit (pieces)

hFE values are classified as follows :

Item

hFE

R

180 to 390

Q

120 to 270

Electrical characteristic curves

BASE TO EMITTER VOLTAGE : VBE

(V)

Fig.1 Grounded emitter propagation

characteristics

02.0

1000

2000

1

200

500

100

20

50

10

2

5

0.2

0.6

0.4

0.8 1.0 1.2 1.4 1.6 1.8

Ta

=25°C

VCE

=3V

COLLECTOR TO EMITTER VOLTAGE : VCE

(V)

Fig.2 Grounded emitter output

characteristics

0

0.1

0.2

0.3

0.4

0.5

0.4

0.8

1.2

1.6

2.0

0

Ta

=25°C

IB

=0A

3.0mA

2.7mA

2.4mA

2.1mA

1.8mA

1.5mA

1.2mA

0.9mA

0.6mA

0.3mA

COLLECTOR CURRENT : IC

(mA)

Fig.3 DC current gain vs. collector

current

5

500

10

20

50 100 200

500 1A 2A

200

100

50

20

Ta

=25°C

VCE

=3V

1V

COLLECTOR CURRENT : IC (mA)

Fig.4 Collector-emitter saturation

voltage vs. collector current

500

20

200

100

50

5

10 20

50 100 200

500 1A 2A

Ta

=25°C

10

20

IC/IB

=50

COLLECTOR CURRENT : IC (mA)

Fig.5 Collector-emitter saturation

voltage vs. collector current

5

1

2

0.2

0.5

0.1

10 20

50 100 200

500 1A 2A

Ta

=25°C

IC/IB

=10

EMITTER CURRENT : IE (mA)

Fig.6 Transition frequency vs. emitter

current

-2

−1

200

−5 −10 −20 −50 −100−200 −500 −1A

500

1000

100

50

20

Ta

=25°C

VCE

=5V

0.5

200

10

500

1000

100

20

50

12

5

10

20

Ta

=25°C

f

=1MHz

IE

=0A

IC

=0A

COLLECTOR TO BASE VOLTAGE : VCB (V)

EMITTER TO BASE VOLTAGE

: VEB (V)

Fig.7 Collector output capacitance vs.

collector-base voltage

Emitter input capacitance vs.

emitter-base voltage

Cib

Cob

COLLECTOR TO EMITTER VOLTAGE : VCE (V)

Fig.8 Safe operating area

5

0.1

50

2

0.2

0.5

1

0.1

0.05

0.2

0.5

1

2

5

10

20

0.01

0.02

(2SD1758)

PW=100ms∗

TC

=25°C

∗Single

nonrepetitive

pulse

Ic Max

Ic Max Pulse

Ta

=25°C

Single

nonrepetitive

pulse

0.2

0.5

1

2

5

10

20

50

3

2

1

0.1

0.2

0.5

0.05

COLLECTOR TO EMITTER VOLTAGE : VCE (V)

Fig.9 Safe operating area

(2SD1862)

类似零件编号 - 2SD1758TLR

制造商	部件名	数据表	功能描述
Rohm	2SD1758	107Kb / 4P	Medium Power Transistor (32V, 2A)
Rohm	2SD1758	124Kb / 4P	Medium Power Transistor (32V, 2A)
TRANSYS Electronics Lim...	2SD1758	55Kb / 1P	Plastic-Encapsulated Transistors
Rohm	2SD1758	157Kb / 3P	Medium power transistor (32V, 2A)
Guangdong Kexin Industr...	2SD1758	40Kb / 1P	Medium Power Transistor

More results

类似说明 - 2SD1758TLR

制造商	部件名	数据表	功能描述
Rohm	2SB1182	153Kb / 4P	Medium power transistor (-32V, -2A)
	2SB891F	538Kb / 11P	MEDIUM POWER TRANSISTOR(-32V, -2A)
	2SB1188	180Kb / 4P	Medium power transistor (-32V, -2A)
Nanjing International G...	2SB1188	483Kb / 4P	Medium power transistor(-32V,-2A)
Rohm	2SD1758	157Kb / 3P	Medium power transistor (32V, 2A)
	2SD1766	176Kb / 4P	Medium power transistor (32V, 2A)
	MP6X2	118Kb / 4P	Medium Power Transistor (32V, 2A)
	MP6Z2	119Kb / 6P	Medium Power Transistor (32V, 2A)
	2SB1182TLR	116Kb / 4P	Medium power transistor (32V,2A)
	2SB1188T100Q	180Kb / 4P	Medium power transistor (32V, 2A)