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STP26NM60N 数据表(PDF) 6 Page - STMicroelectronics |
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STP26NM60N 数据表(HTML) 6 Page - STMicroelectronics |
6 / 23 page Electrical characteristics STB26NM60N, STF26NM60, STI26NM60N, STP26NM60N, STW26NM60N 6/23 Doc ID 15642 Rev 5 Table 8. Source drain diode Symbol Parameter Test conditions Min. Typ. Max Unit ISD ISDM (1) 1. Pulse width limited by safe operating area Source-drain current Source-drain current (pulsed) - 20 80 A A VSD (2) 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Forward on voltage ISD = 20 A, VGS = 0 - 1.5 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 20 A, di/dt = 100 A/µs VDD = 60 V (see Figure 20) - 370 5.8 31.6 ns µC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 20 A, di/dt = 100 A/µs VDD = 60 V, Tj = 150 °C (see Figure 20) - 450 7.5 32.5 ns µC A |
类似零件编号 - STP26NM60N |
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类似说明 - STP26NM60N |
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