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STF13NM60N 数据表(PDF) 3 Page - STMicroelectronics |
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STF13NM60N 数据表(HTML) 3 Page - STMicroelectronics |
3 / 21 page STF/I/P/U/W13NM60N Electrical ratings Doc ID 15420 Rev 5 3/21 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit TO-220FP I²PAK, TO-220, IPAK, TO-247 VDS Drain-source voltage 600 V VGS Gate-source voltage ± 25 V ID Drain current (continuous) at TC = 25 °C 11(1) 1. Limited by maximum junction temperature 11 A ID Drain current (continuous) at TC = 100 °C 6.93(1) 6.93 A IDM (2) 2. Pulse width limited by safe operating area Drain current (pulsed) 44(1) 44 A PTOT Total dissipation at TC = 25 °C 25 90 W dv/dt (3) 3. ISD ≤ 11 A, di/dt ≤ 400 A/µs, VDS peak ≤ V(BR)DSS, VDD = 80% V(BR)DSS. Peak diode recovery voltage slope 15 V/ns VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s;TC=25 °C) 2500 V Tstg Storage temperature - 55 to 150 °C Tj Max. operating junction temperature 150 °C Table 3. Thermal data Symbol Parameter Value Unit TO-220FP I²PAK TO-220 IPAK TO-247 Rthj-case Thermal resistance junction-case max 5 1.39 °C/W Rthj-amb Thermal resistance junction-ambient max 62.5 62.5 100 50 °C/W Table 4. Avalanche characteristics Symbol Parameter Value Unit IAS Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) 3.5 A EAS Single pulse avalanche energy (starting TJ=25 °C, ID=IAS, VDD=50 V) 200 mJ |
类似零件编号 - STF13NM60N |
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类似说明 - STF13NM60N |
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